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2ED020I12-F Datasheet

2ED020I12-F Datasheet
Total Pages: 6
Size: 229.28 KB
Infineon Technologies
This datasheet covers 1 part numbers: 2ED020I12-F
2ED020I12-F Datasheet Page 1
2ED020I12-F Datasheet Page 2
2ED020I12-F Datasheet Page 3
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2ED020I12-F Datasheet Page 6
2ED020I12-F

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Driven Configuration

Half-Bridge

Channel Type

Independent

Number of Drivers

2

Gate Type

IGBT, N-Channel MOSFET

Voltage - Supply

0V ~ 18V

Logic Voltage - VIL, VIH

-

Current - Peak Output (Source, Sink)

1A, 2A

Input Type

Inverting

High Side Voltage - Max (Bootstrap)

1200V

Rise / Fall Time (Typ)

-

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

20-SOIC (0.295", 7.50mm Width), 18 Leads

Supplier Device Package

PG-DSO-18-2