1N8026-GA Datasheet
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Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 8A (DC) Voltage - Forward (Vf) (Max) @ If 1.6V @ 2.5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 10µA @ 1200V Capacitance @ Vr, F 237pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-257-3 Supplier Device Package TO-257 Operating Temperature - Junction -55°C ~ 250°C |
