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1N6080US Datasheet

1N6080US Datasheet
Total Pages: 3
Size: 135.43 KB
Microsemi
This datasheet covers 9 part numbers: 1N6080US, 1N6081US, 1N6079US, 1N6078US, 1N6077US, 1N6076US, 1N6075US, 1N6073US, 1N6074US
1N6080US Datasheet Page 1
1N6080US Datasheet Page 2
1N6080US Datasheet Page 3
1N6080US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 37.7A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

10µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, G

Supplier Device Package

G-MELF (D-5C)

Operating Temperature - Junction

-65°C ~ 155°C

1N6081US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 37.7A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

10µA @ 150V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, G

Supplier Device Package

G-MELF (D-5C)

Operating Temperature - Junction

-65°C ~ 155°C

1N6079US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 37.7A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, G

Supplier Device Package

G-MELF (D-5C)

Operating Temperature - Junction

-65°C ~ 155°C

1N6078US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io)

6A

Voltage - Forward (Vf) (Max) @ If

1.76V @ 18.8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

5µA @ 150V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

E-MELF

Supplier Device Package

D-5B

Operating Temperature - Junction

-65°C ~ 155°C

1N6077US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

6A

Voltage - Forward (Vf) (Max) @ If

1.76V @ 18.8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

5µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, E

Supplier Device Package

D-5B

Operating Temperature - Junction

-65°C ~ 155°C

1N6076US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

6A

Voltage - Forward (Vf) (Max) @ If

1.76V @ 18.8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

5µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, E

Supplier Device Package

D-5B

Operating Temperature - Junction

-65°C ~ 155°C

1N6075US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

2.04V @ 9.4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

1µA @ 150V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, A

Supplier Device Package

D-5A

Operating Temperature - Junction

-65°C ~ 155°C

1N6073US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

2.04V @ 9.4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

1µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, A

Supplier Device Package

D-5A

Operating Temperature - Junction

-65°C ~ 155°C

1N6074US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

2.04V @ 9.4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

1µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, A

Supplier Device Package

D-5A

Operating Temperature - Junction

-65°C ~ 155°C