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1N5831R Datasheet

1N5831R Datasheet
Total Pages: 3
Size: 766.63 KB
GeneSiC Semiconductor
This datasheet covers 6 part numbers: 1N5831R, 1N5830R, 1N5829R, 1N5831, 1N5830, 1N5829
1N5831R Datasheet Page 1
1N5831R Datasheet Page 2
1N5831R Datasheet Page 3
1N5831R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5830R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

25V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5829R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5831

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5830

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

25V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C

1N5829

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

580mV @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

2mA @ 20V

Capacitance @ Vr, F

-

Mounting Type

Chassis, Stud Mount

Package / Case

DO-203AA, DO-4, Stud

Supplier Device Package

DO-4

Operating Temperature - Junction

-55°C ~ 150°C