Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUD19P06-60-GE3

SUD19P06-60-GE3

For Reference Only

Part Number SUD19P06-60-GE3
PNEDA Part # SUD19P06-60-GE3
Description MOSFET P-CH 60V 18.3A TO-252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 259,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD19P06-60-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD19P06-60-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD19P06-60-GE3, SUD19P06-60-GE3 Datasheet (Total Pages: 8, Size: 155.69 KB)
PDFSUD19P06-60-E3 Datasheet Cover
SUD19P06-60-E3 Datasheet Page 2 SUD19P06-60-E3 Datasheet Page 3 SUD19P06-60-E3 Datasheet Page 4 SUD19P06-60-E3 Datasheet Page 5 SUD19P06-60-E3 Datasheet Page 6 SUD19P06-60-E3 Datasheet Page 7 SUD19P06-60-E3 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SUD19P06-60-GE3 Datasheet
  • where to find SUD19P06-60-GE3
  • Vishay Siliconix

  • Vishay Siliconix SUD19P06-60-GE3
  • SUD19P06-60-GE3 PDF Datasheet
  • SUD19P06-60-GE3 Stock

  • SUD19P06-60-GE3 Pinout
  • Datasheet SUD19P06-60-GE3
  • SUD19P06-60-GE3 Supplier

  • Vishay Siliconix Distributor
  • SUD19P06-60-GE3 Price
  • SUD19P06-60-GE3 Distributor

SUD19P06-60-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1710pF @ 25V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 38.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPB06N03LB G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2782pF @ 15V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF2807ZSPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.4mOhm @ 53A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3270pF @ 25V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 110A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

i4-Pac™-5

STL7LN80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.15Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 100V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

RJK2057DPA-WS#J0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

85mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

8-WPAK

Package / Case

8-PowerWDFN

Recently Sold

FDS6680AS

FDS6680AS

ON Semiconductor

MOSFET N-CH 30V 11.5A 8SOIC

ACPL-247-500E

ACPL-247-500E

Broadcom

OPTOISO 3KV 4CH TRANS 16SOIC

82400102

82400102

Wurth Electronics

TVS DIODE 5V 7.7V SOT23-6L

IRGP4750D-EPBF

IRGP4750D-EPBF

Infineon Technologies

IGBT 650V 70A 273W TO247AD

NRVBS3100T3G

NRVBS3100T3G

ON Semiconductor

DIODE SCHOTTKY 100V 3A SMC

MAX14757EUE+

MAX14757EUE+

Maxim Integrated

IC SWITCH QUAD SPST 16TSSOP

PLA10AN3630R3D2B

PLA10AN3630R3D2B

Murata

COMMON MODE CHOKE 300MA 2LN TH

XC9572XL-10VQ44I

XC9572XL-10VQ44I

Xilinx

IC CPLD 72MC 10NS 44VQFP

1014-12

1014-12

Microsemi

RF TRANS NPN 50V 1.4GHZ 55LT

ABM8G-24.000MHZ-18-D2Y-T

ABM8G-24.000MHZ-18-D2Y-T

Abracon

CRYSTAL 24.0000MHZ 18PF SMD

LV8548MC-AH

LV8548MC-AH

ON Semiconductor

IC MOTOR DRIVER PAR MFP10S

MAX3295AUT+T

MAX3295AUT+T

Maxim Integrated

IC DRIVER 1/0 SOT23-6